Patent Number: 6,251,241

Title: Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield

Abstract: An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate to the dielectric window and substantially parallel to the plane, and a shield located between the coil and the dielectric window. The shield has multiple openings, wherein the multiple openings of the shield are disposed at locations corresponding to areas between the turns of the coil.

Inventors: Shin; Eun-Hee (Seoul, KR), Kim; Jin-Man (Seoul, KR), Choi; Baik-Soon (Kyunggi-do, KR), Cha; Hun (Kyunggi-do, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01J 37/32 (20060101); C23C 014/34 ()

Expiration Date: 06/26/2018