Patent Number: 6,251,470

Title: Methods of forming insulating materials, and methods of forming insulating materials around a conductive component

Abstract: In one aspect, the invention encompasses a method of forming an insulating material around a conductive component. A first material is chemical vapor deposited over and around a conductive component. Cavities are formed within the first material. After the cavities are formed, at least some of the first material is transformed into an insulative second material. In another aspect, the invention encompasses a method of forming an insulating material. Polysilicon is deposited proximate a substrate. A porosity of the polysilicon is increased. After the porosity is increased, at least some of the polysilicon is transformed into silicon dioxide.

Inventors: Forbes; Leonard (Corvallis, OR), Ahn; Kie Y. (Chappaqua, NY)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 21/316 (20060101); B05D 005/12 ()

Expiration Date: 06/26/2018