Patent Number: 6,251,487

Title: Method for coating a resist film

Abstract: A resist film having a thickness of 5500 .ANG. or less is coated on the wafer having a large diameter of 8 inches or more by the spin coat process. A resist is dripped while allowing the wafer to be rotated at a rotation speed of 500 rpm to 1200 rpm and the dripping of the resist is suspended at the time of spreading the resist on the whole surface of the wafer. The rotation speed is raised to the predetermined rotation speed which regulates the thickness of the resist film and is determined from the correlation of the predetermined rotation speed and the thickness of the resist film. The wafer is rotated for 1 second to 5 seconds at the predetermined rotation speed. Then, the wafer is rotated for 15 seconds or more at the rotation speed which is lower than the predetermined rotation speed.

Inventors: Yonaha; Shinya (Tokyo, JP)

Assignee: NEC Corporation

International Classification: B05C 11/08 (20060101); B05D 1/00 (20060101); G03F 7/16 (20060101); B05D 001/02 ()

Expiration Date: 06/26/2018