Patent Number: 6,251,541

Title: Partial collective mask for a charged particle beam

Abstract: A partial collective mask for charged particle beam exposure of the present invention is capable of being easily reshaped in order to obviate snapping, defective contact draw and other critical faults. The mask is formed not only with openings constituting main patterns or device patterns, but also with openings constituting auxiliary patterns. When any one of the main patterns has a size short of a designed size and is apt to bring about snapping or similar critical fault, such a defective pattern and the auxiliary patterns adjoining it are jointed together so as to correct the size.

Inventors: Yamada; Yasuhisa (Tokyo, JP)

Assignee: NEC Corporation

International Classification: G03F 1/16 (20060101); G03F 009/00 ()

Expiration Date: 06/26/2018