Patent Number: 6,251,542

Title: Semiconductor wafer etching method

Abstract: A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.

Inventors: Tomita; Masahiro (Anjyo, JP), Souki; Yasuo (Toyota, JP), Ito; Motoki (Nagoya, JP), Tanaka; Kazuo (Obu, JP), Tanaka; Hiroshi (Toyokawa, JP)

Assignee: Nippondenso Co., Ltd.

International Classification: H01L 21/311 (20060101); H01L 21/312 (20060101); H01L 21/02 (20060101); H01L 21/306 (20060101); H01L 021/302 ()

Expiration Date: 06/26/2018