Patent Number: 6,251,547

Title: Simplified process for making an outrigger type phase shift mask

Abstract: A simple, cost-effective method for forming a lithography mask with a directly imaged portion and an attenuated, phase shifted portion. In particular, the use of such a method for forming an outrigger-type phase shift mask. The mask is formed on a blank consisting of a transparent quartz substrate over which is an attenuating phase shift layer and an optically opaque layer, by a process that produces a pattern in an E-beam sensitive resist with two different E-beam energy depositions. The higher energy deposition is used to form the main pattern, while the lower energy deposition forms the pattern for the outrigger.

Inventors: Tzu; San-De (Taipei, TW), Lin; Chia-Hui (Hsin-Chu, TW), Chou; Wei-Zen (Taipei, TW)

Assignee: Taiwan Semiconductor Manufacturing Company

International Classification: G03F 1/14 (20060101); G03F 1/00 (20060101); G03F 009/00 (); G03C 005/00 ()

Expiration Date: 06/26/2018