Patent Number: 6,251,568

Title: Methods and apparatus for stripping photoresist and polymer layers from a semiconductor stack in a non-corrosive environment

Abstract: The present invention relates to method and apparatus for removing photoresist material from a wafer surface. In particular, the present invention employs a dry strip process to remove photoresist material that remains after conductive material has been etched to form conductive features. The inventive process includes a reactive ion strip process that includes fluorine, which forms salts with conductive material embedded in the photoresist material. The salts are then removed from the wafer surface by dissolving them in a solvent such as deionized water.

Inventors: Hsia; Shao-Wen (Mission Viejo, CA), Huang; Peter Y. (South Coast Metro, CA)

Assignee: Conexant Systems Inc.

International Classification: G03F 7/42 (20060101); H01L 21/02 (20060101); H01L 21/311 (20060101); H01L 21/3213 (20060101); G03F 007/36 ()

Expiration Date: 06/26/2018