Patent Number: 6,251,697

Title: Non-contact method for monitoring and controlling plasma charging damage in a semiconductor device

Abstract: The present invention provides a method for controlling a process parameter for fabricating a semiconductor wafer. In one embodiment, the method includes forming a test substrate using a given process parameter, determining a flatband voltage of the test substrate, and modifying the given process parameter to cause the flatband voltage to approach zero. The process parameter that is modified to cause the flatband voltage to approach zero may vary. The flatband may be determined by a non-contact method, which uses a kelvin probe to measure the flatband voltage and a corona source to deposit a charge on the test substrate.

Inventors: Chacon; Carlos M. (Orlando, FL), Roy; Pradip K. (Orlando, FL)

Assignee: Agere Systems Guardian Corp.

International Classification: H01L 21/66 (20060101); H01L 021/66 ()

Expiration Date: 06/26/2018