Patent Number: 6,251,700

Title: Method of manufacturing complementary metal-oxide-semiconductor photosensitive device

Abstract: A method of fabricating a complementary metal-oxide-semiconductor (CMOS) photosensitive device. In this method, a wafer substrate is provided. Then, a first passivation layer is formed over the wafer substrate. The first passivation layer, which is made from a material that includes silicon nitride or silicon oxide, is heated so that it melts. Then, color filters including a red filter region, a green filter region and a blue filter region are formed over the first passivation layer. The color filters are used to filter out different colors of monochromatic light. The color filters are made from a material that includes acrylic. Subsequently, a second passivation layer having a planar top surface is formed over the color filters. The second passivation layer is made from a material that includes silicon nitride or silicon oxide. Next, photolithographic and etching operations are carried out to form an opening through the second passivation layer and the first passivation layer. This opening exposes the substrate wafer. Finally, a micro-lens layer is formed over the second passivation layer such that an individual micro-lens is positioned above each color filter.

Inventors: Lin; Wei-Chiang (Hsinchu, TW), Pai; Yuan-Chi (Nantou, TW)

Assignee: United Microelectronics Corp.

International Classification: H01L 27/146 (20060101); H01L 021/339 ()

Expiration Date: 06/26/2018