Patent Number: 6,251,701

Title: All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof

Abstract: An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.

Inventors: McCandless; Brian E. (Elkton, MD)

Assignee: The United States of America as represented by the United States Department of Energy

International Classification: H01L 31/18 (20060101); H01L 021/00 ()

Expiration Date: 06/26/2018