Patent Number: 6,251,713

Title: Method of making an SRAM storage cell with N channel thin film transistor load devices

Abstract: An SRAM cell includes a pair of N channel transistors acting as inverting circuits, a pair of N channel transistors which perform the control function for the cell, and a pair of N channel thin film transistors in depletion mode with gate and source shorted to provide load devices for the N channel inverter transistors of the SRAM cell.

Inventors: Chan; Tsiu Chiu (Carrollton, TX), Nguyen; Loi N. (Carrollton, TX)

Assignee: STMicroelectronics, Inc.

International Classification: G11C 11/412 (20060101); H01L 27/11 (20060101); H01L 021/00 ()

Expiration Date: 06/26/2018