Patent Number: 6,251,714

Title: Method of making thin film field effect transistors

Abstract: A thin film field effect transistor includes: a) a thin film channel region; b) a pair of opposing electrically conductive first and second source/drain regions adjacent the thin film channel region; c) a gate insulator and a gate positioned adjacent the thin film channel region for electrically energizing the channel region to switch on the thin film field effect transistor; d) the first source/drain region having a first thickness, the second source/drain region having a second thickness, the channel region having a third thickness; at least one of the first and second thicknesses being greater than the third thickness. Methods are disclosed for making thin field effect transistors.

Inventors: Dennison; Charles H. (Boise, ID), Manning; Monte (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/02 (20060101); H01L 21/336 (20060101); H01L 21/70 (20060101); H01L 27/11 (20060101); H01L 21/8244 (20060101); H01L 29/66 (20060101); H01L 29/786 (20060101); H01L 021/84 ()

Expiration Date: 06/26/2018