Patent Number: 6,251,718

Title: Method for manufacturing semiconductor device

Abstract: A method for producing a semiconductor device includes the steps of: forming an impurity diffusion layer for controlling a threshold voltage by ion implantation; and conducting a high-temperature rapid heat treatment for recovering crystal defects generated by the ion implantation. More specifically, treatment conditions for the high-temperature rapid heat treatment are set in such a manner that interstitial atoms causing the crystal defects are diffused, and impurities in the impurity diffusion layer are not diffused. For example, the high-temperature rapid heat treatment is conducted in a temperature range of about 900.degree. C. to about 1100.degree. C.

Inventors: Akamatsu; Kaori (Hirakata, JP), Odanaka; Shinji (Hirakata, JP), Umimoto; Hiroyuki (Takarazuka, JP)

Assignee: Matsushita Electric Industrial Co., Ltd.

International Classification: H01L 21/74 (20060101); H01L 21/8238 (20060101); H01L 29/10 (20060101); H01L 21/324 (20060101); H01L 21/70 (20060101); H01L 29/02 (20060101); H01L 21/28 (20060101); H01L 21/265 (20060101); H01L 21/02 (20060101); H01L 021/823 ()

Expiration Date: 06/26/2018