Patent Number: 6,251,720

Title: High pressure reoxidation/anneal of high dielectric constant materials

Abstract: A high dielectric constant (HDC) capacitive dielectric film is fabricated in a capacitor structure using relatively high pressure surface treatments. After forming the HDC capacitive dielectric film on a supporting bottom plate electrode structure, a surface treatment comprising oxidation, at a pressure of at least approximately one atmosphere and temperatures of approximately at least 200 degrees Celsius densifies/conditions the HDC capacitive dielectric film. When using a polysilicon, crystalline silicon, hemispherical grain polysilicon, germanium, or silicon-germanium bottom plate electrode, a relatively high pressure surface treatment, comprising rapid thermal nitridation or oxidation, is used after forming the bottom plate electrode, forming a diffusion barrier layer in a controlled manner.

Inventors: Thakur; Randhir P. S. (Boise, ID), DeBoer; Scott Jeffrey (Boise, ID)


International Classification: H01L 21/02 (20060101); H01L 21/321 (20060101); H01L 21/70 (20060101); H01L 21/8242 (20060101); H01L 021/824 ()

Expiration Date: 06/26/2018