Patent Number: 6,251,735

Title: Method of forming shallow trench isolation structure

Abstract: A method of forming a shallow trench isolation (STI) structure. A dielectric layer is formed over the interior surface of a shallow trench. Spacers are formed on the sidewalls of the shallow trench such that a portion of the dielectric layer at the bottom of the shallow trench is exposed. When a silicon oxide layer is subsequently deposited into the shallow trench using ozone and tetra-ethyl-ortho-silicate as reactive gases in a chemical vapor deposition, the silicon oxide layer is deposited faster from the dielectric layer than from the spacers.

Inventors: Lou; Chine-Gie (Hsinchu Hsien, TW)

Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.

International Classification: H01L 21/762 (20060101); H01L 21/70 (20060101); H01L 021/336 (); H01L 021/76 ()

Expiration Date: 06/26/2018