Patent Number: 6,251,738

Title: Process for forming a silicon-germanium base of heterojunction bipolar transistor

Abstract: A process for forming a silicon-germanium base of a heterojunction bipolar transistor. First, a silicon substrate having a mesa surrounded by a trench is formed. Next, a silicon-germanium layer is deposited on the substrate and the portion of the silicon-geranium layer adjacent the mesa is removed to form the silicon-germanium base. In a second embodiment, the process comprises the steps of forming a silicon substrate having a mesa surrounded by a trench, forming a dielectric layer in the trench adjacent the mesa, and growing a silicon-germanium layer on the mesa top surface using selective epitaxial growth to form the silicon-germanium base.

Inventors: Huang; Feng-Yi (Stormville, NY)

Assignee: International Business Machines Corporation

International Classification: H01L 21/02 (20060101); H01L 21/331 (20060101); H01L 021/331 ()

Expiration Date: 06/26/2018