Patent Number: 6,251,742

Title: Method of manufacturing a cup-shape capacitor

Abstract: A dielectric layer is deposited over an etching stop layer. Then, a photoresist pattern is patterned on the dielectric layer. An anisotropical etching is performed to etch the dielectric layer by using the photoresist pattern as an etching mask to generate a slot in the dielectric layer. An isotropical etching is subsequently performed using the photoresist pattern as an etching mask. A further anisotropical etching is used to create contact holes to the substrate. Then, the photoresist pattern is stripped. A conductive layer is deposited along the surface of the etched dielectric layer and on the side walls of the contact holes. A filling material is refilled into the cup-shape cavities. The upper portion of the conductive layer is left exposed by the filling material. A selective etching step is performed to remove the upper portions of the conductive layer by using the filling material as a mask. The filling material and the etched dielectric layer are removed. Finally, a dielectric film is deposited along the surface of the first storage node and a conductive layer is deposited over the dielectric film.

Inventors: Lin; Yeh-Sen (Pa Teh, TW)

Assignee: Vanguard International Semiconductor Corporation

International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 27/108 (20060101); H01L 021/283 ()

Expiration Date: 06/26/2018