Patent Number: 6,251,744

Title: Implant method to improve characteristics of high voltage isolation and high voltage breakdown

Abstract: A layer of well oxide is grown over the n-well or p-well region of the semiconductor substrate. A deep n-well implant is performed in high voltage device region, followed by a deep n-well drive-in of the deep n-well implant. The well oxide is removed; the field oxide (FOX) region is created in the high voltage device region. A layer of sacrificial oxide is deposited on the surface of the semiconductor substrate. A low voltage cluster n-well implant is performed in the high voltage PMOS region of the semiconductor substrate followed, for the high voltage NMOS region, by a low voltage cluster p-well implant which is followed by a buried p-well cluster implant.

Inventors: Su; Hung-Der (Kao-Hsiung, TW), Lin; Chrong-Jung (Hsin-Tien, TW), Chen; Jong (Taipei, TW), Chu; Wen-Ting (Kaoshiung, TW), Sung; Hung-Cheng (Hsin-Chu, TW), Kuo; Di-Son (Hsinchu, TW)

Assignee: Taiwan Semiconductor Manufacturing Company

International Classification: H01L 21/762 (20060101); H01L 21/70 (20060101); H01L 021/76 ()

Expiration Date: 06/26/2018