Patent Number: 6,251,749

Title: Shallow trench isolation formation with sidewall spacer

Abstract: An isolation structure which protrudes above the semiconductor surface and sidewall spacers which smooth the topography over said isolation structure.

Inventors: Kuroda; Shigeru (Sakuragawa-mura, JP), Okuno; Yasutoshi (Richardson, TX), Numata; Ken (Dallas, TX)

Assignee: Texas Instruments Incorporated

International Classification: H01L 21/762 (20060101); H01L 21/70 (20060101); H01L 021/76 ()

Expiration Date: 06/26/2018