Patent Number: 6,251,754

Title: Semiconductor substrate manufacturing method

Abstract: The invention provides a number of semiconductor substrate manufacturing methods with which, in manufacturing a semiconductor substrate having a semiconductor layer in an insulated state on a supporting substrate, it is possible to obtain a thick semiconductor layer with a simple process and cheaply while reducing impurity contamination of the semiconductor layer to a minimum. One of these methods includes a defective layer forming step of carrying out ion implantation to a predetermined depth from the surface of a base substrate to partition off a monocrystalline thin film layer at the surface of the base substrate by a defective layer formed by implanted ions, a semiconductor film forming step of forming a monocrystalline semiconductor film of a predetermined thickness on the monocrystalline thin film layer, a laminating step of laminating the base substrate by the surface of the monocrystalline semiconductor film to the supporting substrate, and a detaching step of detaching the base substrate laminated to the supporting substrate at the defective layer.

Inventors: Ohshima; Hisayoshi (Obu, JP), Matsui; Masaki (Nagoya, JP), Onoda; Kunihiro (Nagoya, JP), Yamauchi; Shoichi (Obu, JP)

Assignee: Denso Corporation

International Classification: H01L 21/762 (20060101); H01L 21/70 (20060101); H01L 021/20 ()

Expiration Date: 06/26/2018