Patent Number: 6,251,755

Title: High resolution dopant/impurity incorporation in semiconductors via a scanned atomic force probe

Abstract: The present invention employs a scanned atomic force probe to physical incorporate impurity atoms (dopant or bandgap) into a semiconductor substrate so that the impurity atoms have high resolution and improved placement. Specifically, the method of the present invention comprising a step of physically contacting a semiconductor surface having a layer of a dopant/bandgap source material thereon such that upon said physical contact impurity atoms from the dopant/bandgap source material are driven into the semiconductor substrate.

Inventors: Furukawa; Toshiharu (Essex Junction, VT), Ellis-Monaghan; John Joseph (Grand Isle, VT), Slinkman; James Albert (Montpelier, VT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/02 (20060101); H01L 21/225 (20060101); H01L 29/02 (20060101); H01L 21/00 (20060101); H01L 21/18 (20060101); H01L 29/10 (20060101); H01L 29/66 (20060101); H01L 29/80 (20060101); G12B 21/20 (20060101); G12B 21/00 (20060101); G12B 21/02 (20060101); H01L 021/04 ()

Expiration Date: 06/26/2018