Patent Number: 6,251,758

Title: Construction of a film on a semiconductor wafer

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber. The rf signal means is coupled to the showerhead and the wafer support for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

Inventors: Chern; Chyi (Saratoga, CA), Danek; Michal (Sunnyvale, CA), Liao; Marvin (Singapore, SG), Mosely; Roderick C. (Pleasanton, CA), Littau; Karl (Palo Alto, CA), Raaijmakers; Ivo (Phoenix, AZ), Smith; David C. (Santa Clara, CA)

Assignee: Applied Materials, Inc.

International Classification: C23C 16/56 (20060101); C23C 16/34 (20060101); C23C 16/509 (20060101); C23C 16/50 (20060101); C23C 16/48 (20060101); C23C 16/458 (20060101); H01L 21/02 (20060101); H01J 37/32 (20060101); H01L 21/70 (20060101); H01L 21/285 (20060101); H01L 21/768 (20060101); C23C 16/44 (20060101); H01L 021/28 ()

Expiration Date: 06/26/2018