Patent Number: 6,251,759

Title: Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system

Abstract: An improvement in the deposition of materials in a multiple chamber semiconductor processing cluster tool comprising a first cluster of first chambers, a second cluster of second chambers and a transition chamber located between the first cluster and the second cluster, where the transition chamber is adapted to deposit a material upon a wafer. Specifically, the transition chamber provides a flash coating of PVD copper on the wafer which significantly improves the adhesion of subsequently CVD deposited bulk copper without sacrifice in the throughput of the cluster tool.

Inventors: Guo; Xin Sheng (Los Altos Hills, CA), Schmitt; John V. (Sunnyvale, CA), Li; Shih-Hung (Sunnyvale, CA)

Assignee: Applied Materials, Inc.

International Classification: H01L 21/00 (20060101); H01L 021/20 (); H01L 021/44 ()

Expiration Date: 06/26/2018