Patent Number: 6,251,769

Title: Method of manufacturing contact pad

Abstract: A method of manufacturing a contact pad. A substrate having a source/drain region formed therein is provided. A dielectric layer is formed over the substrate. An opening is formed in the dielectric layer and exposes the source/drain region. A selective epitaxial process is performed to form a contact pad in the opening, wherein a top of the contact pad extends onto a surface of the dielectric layer.

Inventors: Yew; Tri-Rung (Hsinchu Hsien, TW), Huang; Kuo-Tai (Hsinchu, TW), Lur; Water (Taipei, TW)

Assignee: United Microelectronics Corp

International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/285 (20060101); H01L 21/768 (20060101); H01L 021/476 ()

Expiration Date: 06/26/2018