Patent Number: 6,251,770

Title: Dual-damascene dielectric structures and methods for making the same

Abstract: A dielectric structure and method for making a dielectric structure for dual-damascene applications over a substrate are provided. The method includes forming a barrier layer over the substrate, forming an inorganic dielectric layer over the barrier layer, and forming a low dielectric constant layer over the inorganic dielectric layer. In this preferred example, the method also includes forming a trench in the low dielectric constant layer using a first etch chemistry, and forming a via in the inorganic dielectric layer using a second etch chemistry, such that the via is within the trench. In another specific example, the inorganic dielectric layer can be an un-doped TEOS oxide or a fluorine doped oxide, and the low dielectric constant layer can be a carbon doped oxide (C-oxide) or other low K dielectrics.

Inventors: Uglow; Jay E. (Livermore, CA), Bright; Nicolas J. (San Jose, CA), Hemker; Dave J. (San Jose, CA), MacWilliams; Kenneth P. (Monte Sereno, CA), Benzing; Jeffrey C. (Saratoga, CA), Archer; Timothy M. (Portland, OR)

Assignee: Lam Research Corp.

International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 21/314 (20060101); H01L 21/316 (20060101); H01L 021/476 ()

Expiration Date: 06/26/2018