Patent Number: 6,251,771

Title: Hydrogen passivation of chemical-mechanically polished copper-containing layers

Abstract: An embodiment of the instant invention is a method of forming an electronic device over a semiconductor substrate and having at least one level of metallic conductors, the method comprising the steps of: forming a dielectric layer over the semiconductor substrate, the dielectric layer having openings (step 102 of FIG. 1); forming a layer of the metallic conductor on the dielectric layer (step 104 of FIG. 1); removing a portion of the layer of the metallic conductor on the dielectric layer (step 106 of FIG. 1); and subjecting the exposed metallic conductor to a plasma which contains hydrogen or deuterium so as to passivate the metallic conductor (step 110 of FIG. 1). Preferably, the plasma contains a substance selected from the group consisting of: NH.sub.3, N.sub.2 H.sub.2, H.sub.2 S, and CH.sub.4, and the metallic conductors are comprised of a material selected from the group consisting of: copper, copper doped aluminum, Ag, Sn, Pb, Ti, Cr, Mg, Ta, and any combination thereof. The step of removing a portion of the layer of the metallic conductor is, preferably, performed by sputtering off a portion of the metallic conductor, chemical-mechanical polishing, etching, or a combination thereof.

Inventors: Smith; Patricia B. (Colleyville, TX), Dixit; Girish A. (Plano, TX), Zielinski; Eden (Rowlett, TX), Russell; Stephen W. (Dallas, TX)

Assignee: Texas Instruments Incorporated

International Classification: H01L 21/02 (20060101); H01L 21/321 (20060101); H01L 021/476 ()

Expiration Date: 06/26/2018