Patent Number: 6,251,775

Title: Self-aligned copper silicide formation for improved adhesion/electromigration

Abstract: A method for forming a semiconductor structure includes supplying a structure having an exposed last metalization layer, cleaning the last metalization layer, forming a silicide in a top portion of the last metalization layer and forming a terminal over the silicide.

Inventors: Armbrust; Douglas S. (Colchester, VT), Gibson; Margaret L. (Underhill, VT), Serianni; Laura (Milton, VT), White; Eric J. (Charlotte, VT)

Assignee: International Business Machines Corporation

International Classification: H01L 21/02 (20060101); H01L 21/60 (20060101); H01L 021/44 ()

Expiration Date: 06/26/2018