Patent Number: 6,251,776

Title: Plasma treatment to reduce stress corrosion induced voiding of patterned metal layers

Abstract: Stress corrosion induced voiding of patterned metal layers is avoided or substantially reduced by removing etching residues before gap filling. Embodiments include etching an Al or Al alloy layer employing fluorine and/or chlorine chemistry, wet cleaning, treating with a plasma containing ammonia or ammonia and oxygen at a temperature of at least about C. and gap filling with a dielectric material, e.g. HDP oxide by HDP CVD.

Inventors: Ngo; Minh Van (Union City, CA), Chan; Simon S. (Saratoga, CA), Sanderfer; Anne E. (Campbell, CA), Ko; King Wai Kelwin (San Jose, CA)

Assignee: Advanced Micro Devices, Inc.

International Classification: H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 21/3213 (20060101); H01L 21/306 (20060101); H01L 021/441 ()

Expiration Date: 06/26/2018