Patent Number: 6,251,777

Title: Thermal annealing method for forming metal silicide layer

Abstract: A method for forming a metal silicide layer. There is first provided a substrate. There is then formed over the substrate a silicon layer, where the silicon layer has other than an amorphous silicon surface. There is then annealed thermally the silicon layer at a temperature greater than a silicidation temperature for forming a metal silicide layer upon the silicon layer to thus form from the silicon layer a thermally annealed silicon layer. Finally, there is then deposited upon the thermally annealed silicon layer a metal silicide forming metal while employing a metal deposition method such that upon contact with the thermally annealed silicon layer the metal silicide forming metal reacts in-situ to form a metal silicide layer upon a partially consumed thermally annealed silicon layer formed from the thermally annealed silicon layer.

Inventors: Jeng; Shwangming (Hsin-Chu, TW), Yu; Chen-Hua (Hsin-Chu, TW)

Assignee: Taiwan Semiconductor Manufacturing Company

International Classification: H01L 21/02 (20060101); H01L 21/336 (20060101); H01L 21/28 (20060101); H01L 21/285 (20060101); H01L 021/44 ()

Expiration Date: 06/26/2018