Patent Number: 6,251,779

Title: Method of forming a self-aligned silicide on a semiconductor wafer

Abstract: This invention provides a method of forming a self-aligned silicide of a semiconductor wafer, the surface of the semiconductor wafer comprising at least one silicon device. A cobalt-containing metallic layer is formed on the semiconductor wafer which covers on the surface of the silicon device. A first thermal treatment process is performed to rapidly heat the semiconductor wafer up to 300.about.500.degree. C. for 10.about.50 seconds and form Co.sub.2 Si on the surface of the silicon device. A second thermal treatment process is performed to rapidly heat the semiconductor wafer up to 400.about.680.degree. C. for 20.about.50 seconds and then cool down the semiconductor wafer afterwards so as to convert Co.sub.2 Si into CoSi. An etching process is performed to remove the metallic layer. A third thermal treatment process is performed to rapidly heat the semiconductor wafer up to 700.about.950.degree. C. for 30.about.60 seconds and then cool down the semiconductor wafer afterward so as to convert CoSi into the self-aligned silicide.

Inventors: Lu; Hsiao-Ling (Chungho, TW), Chen; Li-Yeat (Hsin-Chu, TW), Hsieh; Wen-Yi (Hsin-Chu, TW)

Assignee: United Microelectronics Corp.

International Classification: H01L 21/02 (20060101); H01L 21/336 (20060101); H01L 21/28 (20060101); H01L 21/285 (20060101); H01L 021/44 ()

Expiration Date: 06/26/2018