Patent Number: 6,251,780

Title: Method for fabricating thin film at high temperature

Abstract: A method for fabricating a semiconductor device includes the steps of forming a refractory metal film on a semiconductor substrate, forming a capping film on the refractory metal film, injecting IV group atoms into the capping film to knock atoms of the capping film into the refractory metal film, and forming a metal silicide film at an interface between the semiconductor substrate and the refractory metal film.

Inventors: Sohn; Dong Kyun (Chungcheongbuk-do, KR), Park; Ji Soo (Chungcheongbuk-do, KR), Bae; Jong Uk (Chungcheongbuk-do, KR)

Assignee: Hyundai Electronics Industries Co., Ltd.

International Classification: H01L 21/02 (20060101); H01L 21/336 (20060101); H01L 21/28 (20060101); H01L 21/285 (20060101); H01L 021/44 ()

Expiration Date: 06/26/2018