Patent Number: 6,251,782

Title: Specimen preparation by focused ion beam technique

Abstract: A method for preparing small area parallel lapping specimens by a focused ion beam technique is disclosed in which a multiple-staged ion beam milling process is used to prepare a specimen for microscopic examination. The method may be carried out by first providing a high current ion beam for removal of a top surface of a specimen exposing a surface that immediately covers the characteristic feature to be examined to define a small window area that contains the characteristic feature. The present invention novel method may further be combined with a wet etching step after the ion beam milling process is completed. In the wet etching step, a three dimensional surface containing the characteristic feature to be examined is revealed which can then be observed under a scanning electron microscope.

Inventors: Lee; Angela Y.C. (Hsinchu, TW), Chou; Ting (Taipei, TW)

Assignee: Vanguard International Semiconductor Corporation

International Classification: G01N 1/32 (20060101); H01L 021/302 ()

Expiration Date: 06/26/2018