Patent Number: 6,251,790

Title: Method for fabricating contacts in a semiconductor device

Abstract: A contact structure between two conductors in a semiconductor device and a method for fabricating the same which can increase alignment margins between the contact plug and overlying conductor are provided. The contact plug includes a lower conductor formed on a semiconductor substrate, an insulating layer formed on the lower conductor and on the semiconductor substrate, the insulating layer having a contact hole, a contact plug recess a predetermined depth from a top surface of the insulating layer in the contact hole, and a sidewall spacer formed on both lateral sidewalls of remainder of the contact hole. The contact plug structure is made by a process of forming a recessed contact plug in the contact hole formed in an insulating layer. Sidewall spacer is formed on both sidewalls of the remainder of the contact hole that has low aspect ratio as compared to that of the contact hole prior to the formation of the recessed contact plug. The resulting sidewall spacer can have good deposition profile and serves to reduce critical dimension of the contact hole.

Inventors: Jeong; In-Kwon (Kyunggi-do, KR)

Assignee: Samsung Electronics Co., Ltd.

International Classification: H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 021/44 ()

Expiration Date: 06/26/2018