Patent Number: 6,251,792

Title: Plasma etch processes

Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

Inventors: Collins; Kenneth S. (San Jose, CA), Roderick; Craig A. (San Jose, CA), Trow; John R. (Santa Clara, CA), Yang; Chan-Lon (Los Gatos, CA), Wong; Jerry Yuen-Kui (Fremont, CA), Marks; Jeffrey (San Jose, CA), Keswick; Peter R. (Newark, CA), Groechel; David W. (Sunnyvale, CA), Pinson, II; Jay D. (San Jose, CA), Ishikawa; Tetsuya (Chiba, CA), Lei; Lawrence Chang-Lai (Cupertino, CA), Toshima; Masato M. (Sunnyvale, CA), Yin; Gerald Zheyao (Sunnyvale, CA)

Assignee: Applied Materials, Inc.

International Classification: C23C 16/507 (20060101); C23C 16/509 (20060101); C23C 16/50 (20060101); C23C 16/517 (20060101); H01J 37/32 (20060101); H01L 21/02 (20060101); H01L 21/683 (20060101); H01L 21/67 (20060101); H01L 21/311 (20060101); H01L 021/302 ()

Expiration Date: 06/26/2018