Patent Number: 6,251,793

Title: Particle controlling method for a plasma processing chamber

Abstract: A plasma processing chamber includes a substrate holder and a member of silicon nitride such as a liner, focus ring or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize particle contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.

Inventors: Wicker; Thomas E. (Vallejo, CA), Maraschin; Robert A. (Cupertino, CA)

Assignee: Lam Research Corporation

International Classification: H01J 37/32 (20060101); H01L 021/302 (); H01L 021/461 ()

Expiration Date: 06/26/2018