Patent Number: 6,251,794

Title: Method and apparatus with heat treatment for stripping photoresist to eliminate post-strip photoresist extrusion defects

Abstract: A method for removing a photoresist layer from a semiconductor substrate following a conventional dry etching step. A first wet chemical treatment strips the photoresist. A second dry ash with oxygen plasma completes the photoresist removal. To assure complete removal of photoresist imbedded on or within the material underlying the photoresist film, the semiconductor substrate is preheat treated to a temperature in the range of 150 to 250 degrees Centigrade to release the photoresist prior to the second dry ash with oxygen plasma operation. In particular, this method eliminates photoresist extrusion defects from occurring during a bond pad alloy operation.

Inventors: Peng; Chiang-Jen (Shin-Chu County, TW), Lin; Ching-Chung (Taipei, TW)

Assignee: Taiwan Semiconductor Manufacturing Company

International Classification: H01L 21/02 (20060101); H01L 21/60 (20060101); H01L 21/311 (20060101); H01L 021/302 ()

Expiration Date: 06/26/2018