Patent Number: 6,251,795

Title: Method for depositing high density plasma chemical vapor deposition oxide with improved topography

Abstract: A method of forming a self-planarized HDPCVD oxide layer over a substrate having uneven topography in a process chamber is disclosed. The method comprising the steps of: depositing HDPCVD oxide over said uneven topography; and performing a sputter-only step in said process chamber.

Inventors: Shan; Jesse C. (Vancouver, WA), Huang; Chang-Kuei (Camas, WA), Yang; Steve H. Y. (Vancouver, WA)

Assignee: WaferTech, L.L.C.

International Classification: C23C 16/56 (20060101); C23C 16/40 (20060101); H01L 21/02 (20060101); H01L 21/3105 (20060101); H01L 21/316 (20060101); H01L 021/42 ()

Expiration Date: 06/26/2018