Patent Number: 6,251,798

Title: Formation of air gap structures for inter-metal dielectric application

Abstract: A method for the formation of an air gap structure for use in inter-metal applications. A metal pattern of metal lines is formed, a layer of Plasma Polymerized Methylsilane (PPMS) resist is deposited on top of this pattern. The surface of the PPMS resist is subjected to selective exposure. The unexposed PPMS is removed after which the process is completed by closing up the openings within the PPMS.

Inventors: Soo; Choi Pheng (Johor, MY), Tee; Kheng Chok (Singapore, SG), Ong; Kok Keng (Singapore, SG), Chan; Lap (San Francisco, CA)

Assignee: Chartered Semiconductor Manufacturing Company

International Classification: H01L 23/52 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 23/522 (20060101); H01L 021/31 (); H01L 021/469 ()

Expiration Date: 06/26/2018