Patent Number: 6,251,801

Title: Method and apparatus for manufacturing semiconductor device

Abstract: Disclosed is a method of manufacturing a semiconductor device, including the step of supplying an oxidizing gas and a nitriding gas onto one main surface of a semiconductor substrate while heating the substrate so as to oxynitride the surface region of the substrate, wherein the supplying step is performed such that the gaseous phase above the main surface of the substrate forms a first region having a substantially uniform temperature in a direction perpendicular to the main surface of the substrate and a second region interposed between the first region and the substrate and having a temperature gradient in a direction perpendicular to the main surface of the substrate such that the temperature is elevated toward the substrate, and the distance from the main surface of the substrate to the interface between the first and second regions is set at 9.5 cm or less.

Inventors: Saki; Kazuo (Yokohama, JP), Katsui; Shuji (Yokohama, JP)

Assignee: Kabushiki Kaisha Toshiba

International Classification: C23C 8/28 (20060101); C30B 25/02 (20060101); C23C 8/06 (20060101); H01L 21/02 (20060101); C30B 25/14 (20060101); H01L 21/314 (20060101); H01L 021/31 (); H01L 021/469 ()

Expiration Date: 06/26/2018