Patent Number: 6,251,802

Title: Methods of forming carbon-containing layers

Abstract: In one aspect, the invention includes an etching process, comprising: a) providing a first material over a substrate, the first material comprising from about 2% to about 20% carbon (by weight); b) providing a second material over the first material; and c) etching the second material at a faster rate than the first material. In another aspect, the invention includes a capacitor forming method, comprising: a) forming a wordline over a substrate; b) defining a node proximate the wordline; c) forming an etch stop layer over the wordline, the etch stop layer comprising carbon; d) forming an insulative layer over the etch stop layer; e) etching through the insulative layer to the etch stop layer to form an opening through the insulative layer; and e) forming a capacitor construction comprising a storage node, dielectric layer and second electrode, at least a portion of the capacitor construction being within the opening. In yet another aspect, the invention includes a semiconductive material assembly, comprising: a) a semiconductive substrate; and b) a layer over the semiconductive substrate, the layer comprising silicon, nitrogen and carbon.

Inventors: Moore; John T. (Boise, ID), Blalock; Guy T. (Boise, ID), DeBoer; Scott Jeffrey (Boise, ID)

Assignee: Micron Technology, Inc.

International Classification: H01L 21/02 (20060101); H01L 21/314 (20060101); H01L 21/311 (20060101); H01L 021/31 ()

Expiration Date: 06/26/2018