Patent Number: 6,251,804

Title: Method for enhancing adhesion of photo-resist to silicon nitride surfaces

Abstract: A method for enhancing adhesion of photo-resist to silicon nitride surfaces is disclosed. An oxidation process is first performed on the surface of the semiconductor wafer using ozone-dissolved deionized water to transform most of the dangle bonds and Si-N bonds on the surface of the silicon nitride layer into Si-O bonds or Si-ON bonds. An HMDS layer is then formed on the surface of the silicon nitride layer. A photo-resist layer is next formed on the surface of the HMDS layer. Finally, a soft bake process is performed to remove solvents from the photo-resist layer and an exposure process is performed on the photo-resist layer to define a predetermined pattern in the photo-resist layer.

Inventors: Chen; Chung-Chih (Taipei, TW)

Assignee: United Microelectronics Corp.

International Classification: H01L 21/02 (20060101); H01L 21/312 (20060101); H01L 21/321 (20060101); H01L 021/469 ()

Expiration Date: 06/26/2018