Patent Number: 6,251,806

Title: Method to improve the roughness of metal deposition on low-k material

Abstract: A new method is provided to treat the surface of a low-k material. The invention is specifically aimed at the improvement of the TaN barrier layer that is used in the deposition of a dual damascene structure. The invention uses e-beam exposure to improve the barrier metal (PVD TaN) properties for copper and low-k applications.

Inventors: Chang; Chung-I (Hsinchu, TW), Chen; Lai-Juh (Hsinchu, TW)

Assignee: Industrial Technology Research Institute

International Classification: H01L 21/02 (20060101); H01L 21/3105 (20060101); H01L 21/312 (20060101); H01L 21/70 (20060101); H01L 21/768 (20060101); H01L 021/31 ()

Expiration Date: 06/26/2018