Patent Number: 6,252,802

Title: Floating gate MOS transistor charge injection circuit and computation devices incorporating it

Abstract: The charge injection circuit of this invention comprises at least one pair of floating gate MOS transistors having source and drain terminals which are coupled together and to an injection node, and at least one corresponding pair of generators of substantially step-like voltage signals having an initial value and a final value, and having outputs respectively coupled to the control terminals of said transistors. The signal generators are such that the initial value of a first of the signals is substantially the equal of the final value of a second of the signals, and that the final value of the first signal is substantially the equal of the initial value of the second signal.

Inventors: Kramer; Alan (Berkeley, CA), Canegallo; Roberto (Tortona, IT), Chinosi; Mauro (Cologno Monzese, IT), Gozzini; Giovanni (Palazzolo, IT), Rolandi; Pier Luigi (Monleale, IT), Sabatini; Marco (Agrate Brianza, IT)

Assignee: STMicroelectronics S.r.l.

International Classification: G06G 7/26 (20060101); G06N 3/063 (20060101); G11C 16/04 (20060101); G06N 3/00 (20060101); G06G 7/00 (20060101); G11C 007/00 ()

Expiration Date: 06/26/2018