Patent Number: 6,253,621

Title: Micro-void detection

Abstract: According to an example embodiment of the present invention, a semiconductor device having conductive structure is analyzed using acoustic energy. Acoustic energy is generated in the device, and a resulting acoustic wave is detected. Using the detected wave, an index of refraction of a portion of the conductive structure is determined as a function of the wave. The calculated index of refraction is used and at least one defect in the conductive structure is detected. Using this method, defects can be detected during or after the manufacture of semiconductor devices in a cost effective, reliable manner. This method is particularly useful for defects that are not detectable using typical optical scanning methods due to opaque material in semiconductor devices.

Inventors: Jarvis; Richard W. (Austin, TX)

Assignee: Advanced Micro Devices

International Classification: G01N 29/44 (20060101); G01N 29/24 (20060101); G01N 29/07 (20060101); G01N 29/04 (20060101); G01N 029/04 ()

Expiration Date: 07/03/2018