Patent Number: 6,253,703

Title: Microwave chemical vapor deposition apparatus

Abstract: A microwave plasma CVD apparatus comprising a hermetically sealed vacuum vessel, an evacuating means for evacuating the vacuum vessel, and microwave introducing means for introducing a microwave through a microwave transmission circuit into the vacuum vessel to produce a plasma within the vacuum vessel. The microwave transmission circuit includes a cavity resonator integrally provided with two matching circuits. The microwave plasma CVD apparatus solves all the problems in the conventional microwave plasma CVD apparatus, operates at a high rate of operation, improves working efficiency, reduces the manufacturing cost of a-Si devices, and reduces variance in performance between devices employing films deposited by the microwave plasma CVD apparatus. Since the microwave plasma CVD apparatus does not employ any large electromagnet, a film can be formed on a surface having a large area simply by selectively deciding a microwave propagation mode. Since the distance between the cavity resonator and the coupling hole can be varied, the microwave impedance can always be matched regardless of the sectional area of ionization, so that microwave power is used effectively and the gases are used at a very high efficiency.

Inventors: Echizen; Hiroshi (Tokyo, JP), Takaki; Satoshi (Yokohama, JP)

Assignee: Canon Kabushiki Kaisha

International Classification: C23C 16/511 (20060101); C23C 16/50 (20060101); H01J 37/32 (20060101); C23C 016/48 (); C23C 016/50 ()

Expiration Date: 07/03/2018