Patent Number: 6,254,675

Title: Production of epitactic GaN layers on substrates

Abstract: The present invention relates to a process for the application of an epitactic GaN layer to a substrate by pyrolysis of precursor compounds.

Inventors: Aldinger; Fritz (Leinfelden-Echterdingen, DE), Lange; Fred (Santa Barbara, CA), Puchinger; Manfred (Stuttgart, DE), Wagner; Thomas (Nurtingen, DE), Bill; Joachim (Stuttgart, DE), Rodewald; Dieter (Bad Essen-Linne, DE)

Assignee: Max-Planck-Gesellschaft zur Forderung der Wissenschaften E.V.

International Classification: C30B 25/02 (20060101); H01L 21/02 (20060101); H01L 21/208 (20060101); C30B 025/02 ()

Expiration Date: 07/03/2018