Patent Number: 6,254,677

Title: Semiconductor crystal, and method and apparatus of production thereof

Abstract: An apparatus for and method of producing a large semiconductor crystal at a low cost are provided. The apparatus for producing a semiconductor crystal includes a reactor (1) having an open end at both ends thereof, that is formed of any material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, and aluminum oxide, or of a composite material including a base material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, boron nitride, aluminum oxide, magnesium oxide, mullite, and carbon as a base, and including an oxidation-proof or airtight film formed on the surface of the base. The apparatus further includes a resistance heater (3) arranged around the reactor (1) in the atmosphere, a flange (9) attached at the open end to seal the reactor (1), and a crucible (2) mounted in the reactor (1) to store material of a semiconductor crystal. The material stored in the crucible (2) is heated and melted to form a material melt (60). The material melt is solidified to grow a semiconductor crystal (50).

Inventors: Hashio; Katsushi (Itami, JP), Sawada; Shin-ichi (Itami, JP), Tatsumi; Masami (Itami, JP)

Assignee: Sumitomo Electric Industries, Ltd.

International Classification: C30B 15/00 (20060101); C30B 11/00 (20060101); C30B 029/42 (); C30B 035/00 ()

Expiration Date: 07/03/2018