Patent Number: 6,254,683

Title: Substrate temperature control method and device

Abstract: In processing the surface of a substrate 2 that is held with its under-surface in contact with a substrate holder 3 in a vacuum chamber 1, the temperature of substrate 2 is controlled by supplying a heat-conductive gas between the substrate 2 and substrate holder 3. Supply and evacuation of the heat-conductive gas are effected rapidly at high flow rate from both supply line 18 and evacuation line 19 using bypass lines 17a, 17b, while pressure regulation is effected with a low flow rate.

Inventors: Matsuda; Izuru (Kadoma, JP), Haraguchi; Hideo (Toyonaka, JP)

Assignee: Matsushita Electric Industrial Co., Ltd.

International Classification: C23C 16/46 (20060101); C23C 16/458 (20060101); H01J 37/32 (20060101); H01L 21/00 (20060101); C23C 016/00 (); H05H 001/00 ()

Expiration Date: 07/03/2018