Patent Number: 6,254,686

Title: Vented lower liner for heating exhaust gas from a single substrate reactor

Abstract: The present invention is a single wafer reactor having a vented lower liner for heating exhaust gas. The apparatus of the present invention includes a reaction chamber. A wafer support member which divides the chamber into an upper and lower portion is positioned within the chamber. A gas outlet for exhausting gas from the chamber has a vent to exhaust gas from the lower portion of the chamber and an exhaust passage opening to exhaust gas from the upper portion of the chamber. Heated inert purge gas is fed from the lower chamber portion through the vent at a rate so as to prevent the deposition gas from condensing in the exhaust passage.

Inventors: Comita; Paul B. (Menlo Park, CA), Carlson; David K. (Santa Clara, CA), Riley; Norma B. (Pleasanton, CA), Fan; Doria W. (San Francisco, CA), Ranganathan; Rekha (Sunnyvale, CA)

Assignee: Applied Materials, Inc.

International Classification: C23C 16/44 (20060101); C30B 31/00 (20060101); C30B 31/16 (20060101); C23C 16/48 (20060101); C30B 25/14 (20060101); C23C 016/00 ()

Expiration Date: 07/03/2018