Patent Number: 6,254,745

Title: Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source

Abstract: Ionized physical vapor deposition (IPVD) is provided by a method of apparatus for sputtering conductive metal coating material from a magnetron sputtering target that is preferably annular. The sputtered material is ionized in a processing space between the target and a substrate by generating a dense plasma in the space with energy reactively coupled, preferably from a coil located outside of the vacuum chamber behind a dielectric window in the chamber wall at the center of the opening in the sputtering target. Chamber pressures are above 1 mTorr, typically in the 10-100 mTorr range, preferably between 10 and 20 mTorr. A magnetic bucket formed of an array of permanent magnets is positioned behind the inner surface of the chamber wall between the material source and the substrate. The bucket forms a multi-cusp field that operates as a magnetic mirror and functions in the IPVD system environment to repel charged particles moving from the plasma to the chamber wall, thereby increasing plasma confinement and improving the plasma density and uniformity and the ionization fraction of the coating material. The magnetic bucket preferably is formed of an array of ring shaped magnets spaced axially along the chamber wall. Alternatively, an array of axial extending bar magnets spaced circumferentially may be provided.

Inventors: Vukovic; Mirko (Gilbert, AZ)

Assignee: Tokyo Electron Limited

International Classification: C23C 14/35 (20060101); C23C 014/34 ()

Expiration Date: 07/03/2018